Probe look ahead: testing parts not currently under a probehead

ABSTRACT

A semiconductor substrate, probe card, and methods for stressing and testing dies on a semiconductor substrate are provided. The semiconductor substrate, typically a semiconductor wafer, comprises dies disposed thereon and a redistribution layer (RDL) for routing signals from a test circuit into dies on the substrate that are not currently under probe. The RDL includes look-ahead contacts associated with a first die set that are electrically connected by traces to dies of a second die set. Upon contact of elements of the probe tester with the look-ahead contacts, required Vcc power, GND ground potential and signals from the probe tester are routed through the traces to the die of the die set not currently under probe. The dies can comprise a built-in self-stress (BISS) circuit and/or a built-in self-test (BIST) circuit for implementing a stress or test sequence. The look-ahead contacts allow for overlapping or substantially simultaneously stressing and/or testing dies of dies of a die set currently under probe and dies of a second die set located prior to or after the current probe head position (i.e., not under probe).

FIELD OF THE INVENTION

This invention relates to testing of semiconductor dies disposed on asemiconductor substrate.

BACKGROUND OF THE INVENTION

After a semiconductor wafer has been fabricated, a number of the dies onthe wafer are inoperable. Manufacturers of semiconductor devicestypically test the individual dies for functionality prior tosingulation into individual dies, to evaluate various electricalparameters of the integrated circuit components contained on each die,and verify that certain standards are met. Integrated circuits (IC)devices typically undergo three separate test cycles: (1) in-processtesting and monitoring of sheet resistivities, junction depths, anddevice parameters such as current gain and voltage breakdown; (2)wafer-probe testing of electrical parameters prior to die separation;and (3) final testing of reliability and performance after die packagingis completed. Testing of ICs is expensive and time consuming, and it isdesirable to keep testing costs low since these add directly to the costof producing the parts.

Semiconductor wafers are typically subjected to test probing testedprior to singulation into individuals dies using a wafer-level testsystem. As illustrated in FIG. 1, a typical test system 10 includes awafer handler 12 for handling and positioning the wafers 14, a testcircuit 16 for generating test signals, a probe card (probe head) 18,and a probe interface board 20 for routing signals from the test circuitelectronics to the probe card 18. The wafer probe card 18 typicallyincludes multiple probe elements 22, typically in the form of probe pinsor needles, for making temporary electrical connections with contacts onthe dies disposed on the wafer 14, the contacts typically in the form ofbond pads, fuse pads or test pads arranged in a dense area array. Thewafer handler 12 typically includes a wafer chuck 24 configured to movein X and Y directions (i.e., horizontally backward-forward andside-to-side) to align the wafer 14 with the probe card 18, and in the Zdirection (vertically up-down) to move the wafer into contact with theprobe pins 22. Exemplary prior art test systems are described, forexample, in U.S. Pat. Nos. 6,300,786 (Doherty, et al.) and U.S. Pat. No.6,246,245 (Akram et al.), both assigned to Micron Technology, Inc.), thedisclosures of which are incorporated herein.

An example of a prior art semiconductor wafer 14 is illustrated in FIGS.2-3. The wafer 14 includes multiple semiconductor chips or dies 26fabricated using processes that are well known in the art. The dies 26are typically singulated by use of a wafer saw, which grinds the wafer14 along wafer scribe lines 28, usually referred to “streets” or“avenues”, that separate the dies 26 from each other. As shown in FIG.3, each die 26 includes multiple die pads 30. The die pads 30 are inelectrical communication with integrated circuits contained on the die26. For illustrative purposes, each die 26 includes eight die pads 30,which is merely exemplary. The die pads 30 are illustrated as bond pads,but can also be dedicated test pads or fuse pads, disposed on the dies26 or on other portions of the wafer 14.

Conventionally, each die on a wafer is tested by placing the probeelements 22 of a probe card connected to a test system on the pads 30 ofthe die. The test system supplies the proper power levels and signals tothe pads on the die.

An example of a prior art probe card 18 is illustrated in FIG. 4, andtypically comprises an insulating substrate 21, such as a glass filledresin, that includes electric traces (not shown) in electricalcommunication with the contacts or probe pins 22. The probe pins 22 onthe probe card 18 are arranged in patterns corresponding to the patternsof the die pads 30. The probe pins 22 can be configured to makeelectrical connections with the die pads 30 on a specific die 26 or, asin the illustration in FIG. 4, with a group of dies (i.e., four dies) onthe wafer. The probe pins 22 on the probe card 18 are arranged in groups32 a-d and configured on the substrate to correspond to the pattern ofthe die pads 30 on the die 26 to be contacted. Each group 32 a-d ofprobe pins 22 represents a single test site. Typically, two or more testsites are included on the probe card 18 to accommodate testing ofmultiple dies at the same time. The probe card 18 can be formed with anydesired number of test sites. The probe card 18 can also be configuredto test a complete semiconductor wafer 14, or a portion of the dies 26in a partial wafer. In the illustrated example in FIG. 4, the probe card18 includes four test sites such that four dies 26 on the wafer 14 canbe tested simultaneously. During a test procedure using a probe card,stepping techniques can be used to step the wafer 14 or the probe card18, and test a number of dies 26 within a section on the wafer until allthe dies 26 on the wafer have been tested. In those cases where dies 26are positioned along the peripheral edge of a round wafer 14 (notshown), some of the probe pin groups 32 a-d may not have an associateddie under test, and the software that controls the stepping process istypically programmed to register valid test sites.

Manufacturers of semiconductor memory devices typically perform severaloperations on each device to examine various electrical parameters ofthe device and verify that certain minimum standards are met. A fullrange of functionality and timing characteristics of the memory devicesare tested in order to determine if there is a defect in the array ofcells that may fail over time. The test system 16 can transmit specificcombinations of voltages and currents and/or signals to the probeinterface board 20 and through the probe pins 22 of the probe card 18 todies 26 under probe on the semiconductor wafer.

Burn-in stressing of dies is typically performed to accelerate failureusing elevated voltage and temperature levels to stress, and determineoperable voltages, currents, and temperatures. The test system can alsorun diagnostic tests on the memory device(s), which includes furnishinga sequence of commands (e.g., address, data and control signals) to thememory device for storing first data in memory cells of the memorydevice. The memory device can perform operations in response to thecommands, and the operations synchronized to a clock signal. After thesequence, second data can be read from the memory cells and the firstand second data can be compared to detect memory speed, timing,failures, and so forth. The integrated circuits that do not meetspecification can be marked or mapped in software. Following testing,defective circuits can be repaired by actuating fuses (or anti-fuses) toinactivate the defective circuitry and substitute redundant circuitry.

In addition to the use of an external test system, memory testing canalso be performed by means of a built-in self-test (BIST) circuit, whichincorporates test circuitry and test data into the die 26 itself. In aBIST operation, the die is run in a way similar to how it is ultimatelymeant to be run. Activating BIST circuitry requires a Vcc power source,GND ground potential, and can also require signals from a test system.On a wafer level, the BIST circuitry can be disposed in the scribe lines(“streets”) 28 between dies 26 or in the unused edge portions along theperiphery 34 of the wafer 14, or can be included within the dies 26themselves.

Because each memory cell or bit of the memory device must be tested, thetime and equipment necessary for testing memory devices represents asignificant portion of the overall manufacturing cost of such devices.The more chips that can be tested simultaneously, the greater thesavings in testing time and manufacturing cost per chip. Still more timecould be saved if different testing protocols could be performed on aplurality of memory devices simultaneously.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor substrate, a probe card,and a method for stressing and/or testing dies on a semiconductorsubstrate.

In one aspect, the invention provides a semiconductor substratestructured for testing and/or stressing a semiconductor die. In oneembodiment according to the invention, the semiconductor substrate,typically a semiconductor wafer, comprises dies disposed thereon and ametal layer (redistribution layer (RDL)) for re-routing the requisitepower, ground, and signals from a test system into dies on the wafersubstrate that are not in contact with probe elements of the testsystem. The RDL layer enables a path into a die from a location otherthan the original die pad currently being probed. The semiconductorsubstrate can comprise a plurality of die sets, and each die cancomprise one or more pads for contact with an element (e.g., probe pin)of a probe card.

Two or more look-ahead pads or contacts (probe contacts) are associatedwith each die set in addition to the pads on the dies themselves. Thelook-ahead contacts can be positioned on the semiconductor substrate oron a die itself, such that when the pads of the dies of a die set areprobed, the look-ahead contacts associated with that die set are alsoprobed. Each look-ahead contact is electrically connected through atrace to a contact (pad) that is electrically connected to at least onedie of a die set not currently being probed. A look-ahead contact can beelectrically connected to one or more dies of a die set. When thelook-ahead contact is probed, the requisite power, ground, and signalsfrom a test system are routed through the traces to the die(s) of thedie set not currently being probed. For example, the look-ahead contactscan include a power supply voltage (Vcc) contact and a ground potential(GND) contact and any number of signal contacts for receiving signalsfrom an external source. The number of signal contacts can vary from oneto as many as can be accommodated in a particular application.

In embodiments of the semiconductor substrate, the dies can comprise abuilt-in self-stress (BISS) circuit and/or a built-in self-test (BIST)circuit, and/or the semiconductor substrate can comprise a BISS and/orBIST circuit disposed thereon that is associated with a die set andelectrically connected to at least one die of the die set. The BISSand/or BIST circuit can be electrically connected to look-ahead contactsthrough traces.

In another embodiment of the semiconductor substrate, the dies can beconnected through traces to look-ahead contacts to gain access to thecircuitry of the dies, and provide the required Vcc power, GND ground,and signals for running the die according to a product data sheet or forrunning an accelerated operation for stressing or testing, among otheroperations.

In another aspect, the invention provides a probe card for electricallyprobing pads of dies of a die set disposed on a semiconductor substrateand two or more look-ahead contacts that are associated with the dieset. Each look-ahead contact is connected by a trace to at least one dieof a die set not currently under probe to re-route the appropriatepower, ground, and signals from a test system to the dies. In oneembodiment, the probe card comprises a substrate having a first set ofprobe elements disposed thereon for contact with pads of dies of a dieset, and a second set of two or more probe elements disposed thereon forcontact with the look-ahead contacts associated with the die set. Theprobe elements can be in the form, for example, of pins, needles, bumps,among other constructions.

In yet another aspect, the invention provides a method ofstressing/testing dies on a semiconductor substrate. In one embodiment,the method comprises the steps of:

-   -   providing a semiconductor substrate having at least a first set        and a second set of dies disposed thereon, and two or more        look-ahead contacts proximal to the first die set; each die        comprising two or more pads for contact with elements of a probe        tester; and each look-ahead contact electrically connected        through a trace to at least one die of the second die set;    -   providing a test system comprising a test circuit and a probe        device; the probe device comprising a substrate having a first        set of probe elements disposed thereon for contact with the pads        of the dies, and a second set of probe elements for contact with        the look-ahead contacts; and    -   contacting the probe elements with the pads of the dies of the        first die set and the look-ahead contacts proximal to the first        die set, to transmit the required Vcc power, GND ground        potential, and signals from the test system to the dies of the        first die set and through the look-ahead contacts and the traces        to the dies of the second die set.

The method can further comprise initially stepping the probe cardthrough the positions of the wafer to test the dies for opens/shorts.

In an embodiment of the method, required power, ground, and signals aretransmitted from the test system to activate a built-in self-stress(BISS) circuit on or electrically connected to the dies and initiate aBISS operation on the dies. In another embodiment, the test systemfurnishes required power, ground, and signals to activate a built-inself-test (BIST) circuit and initiate a BIST operation in the dies. Inyet another embodiment of the method of the invention, pads on the dienecessary to operate the die for stressing or testing, for example, in anative or normal operation of the die (e.g., according to data sheetspecifications), for accelerated operation, for testing a definedparameter, among others, are probed or connected through traces tolook-ahead contacts, and the test system furnishes required power,ground, and signals to the pads on the die and the look-ahead contactsnecessary stress or operate (WRITE and READ) the dies for testing.

In an embodiment of a method of probe testing dies of a semiconductorsubstrate according to the invention, in an optional first step, a probecard can be initially stepped through positions on the substrate to testthe dies on the substrate for opens/shorts. A stress sequence can thenbe performed on the dies of a first die set under probe and the dies ofa second die set (not under probe) that are electrically connected tothe look-ahead contacts associated with the first die set. Subsequently,a test sequence (write and read) can be conducted on the dies of thefirst die set in contact with the probe elements. To test additional diesets, the probe card can then be moved to position the probe elements incontact with the dies and the look-ahead contacts of the next (second)die set, the look-ahead contacts connected through traces to dies of athird die set. A test of the dies of the second die set can then beconducted by furnishing required power, ground, and signals from thetest system through the probe head elements into the dies of the seconddie set, while stressing the dies of the third die set by conductingrequired power, ground, and signals from the test system into thelook-ahead contacts and through the traces to contacts of the dies ofthe third die set. The probe card is then moved to place the probeelements in contact with the die pads and the look-ahead contacts of thethird die set and the foregoing stress/test operations are repeated ondies of the third and fourth die sets. The probe card is stepped throughthe remaining die sets, and stressing/testing proceeds until all thedies on the wafer have been stressed/tested.

Advantageously, the invention provides an apparatus and method for waferprobe stressing and testing whereby testing/stressing of dies in contactwith elements of a probe card of a wafer test system and dies notcurrently under direct probing can overlap or be performed substantiallysimultaneously. By conducting concurrent or overlapping testing of atleast two die sets, for example, a memory test of dies under probe andstressing the dies located previous to and/or ahead of the current probeposition and not currently under probe, significant savings are realizedin the overall time required for burn-in stressing and testing of thedies on the wafer. The probe step of the present method using alook-ahead contact can also run at higher than ambient (80° C.)temperature in certain part or die modes, which can reduce or eliminatethe need for burn-in stress once the dies are singulated, thus reducingcosts and problems that can affect the functioning of the die andconserving the life expectancy of the die. Stressing can be used inaddition to burn-in testing as a preliminary level of testing toidentify and eliminate marginal defective devices. This cansignificantly reduce the failure rate at a subsequent burn-in testphase. In addition, as a result of early detection of defective failedor weak components, redundant components can be engaged prior tosingulation and individual packaging, or if not, the defective die canbe discarded before additional costs are incurred during packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings, which are forillustrative purposes only. Throughout the following views, thereference numerals will be used in the drawings, and the same referencenumerals will be used throughout the several views and in thedescription to indicate same or like parts.

FIG. 1 is a schematic cross-sectional view of a prior art test system.

FIG. 2 is a top plan view of a prior art semiconductor wafer containingmultiple semiconductor dies.

FIG. 3 is a top plan view of a prior art semiconductor die of the waferin FIG. 2, illustrating die contacts (pads) on an individual die.

FIG. 4 is a plan view of the probe card of the test system shown in FIG.1 and taken along line 4-4, showing probe pins grouped for simultaneouscontact with four dies on the wafer of FIG. 2.

FIG. 5 is a plan view of an embodiment of a semiconductor substrateaccording to the invention, showing the semiconductor substrate withmultiple dies (omitting the die pads) and a redistribution layerincluding two look-ahead contacts associated with each die andinterconnected by traces to contacts on a die of another die set. FIG.5A is a partial view of a die located on the semiconductor substrate ofFIG. 5, showing the die pads. FIG. 5B is a partial plan view of anotherembodiment of a semiconductor substrate according to the inventionshowing three look-ahead contacts associated with each die and connectedto contacts on a die of another die set.

FIG. 6A is a partial plan view of the semiconductor substrate of FIG. 5,showing the look-ahead contacts and trace connections to contacts ondies of another die set (B). FIG. 6B is a partial plan view of anotherembodiment of a semiconductor substrate showing look-ahead contactslocated directly on the dies or in the streets between dies, andconnected by traces to contacts on dies of another die set (B). FIG. 6Cis a plan view of another embodiment of a semiconductor substrateshowing look-ahead contacts connected to more than one die in a seconddie set (B). FIG. 6D is a plan view of another embodiment of asemiconductor substrate showing look-ahead contacts associated with afirst die set (A) connected to contacts and to pads of dies of a seconddie set (B).

FIG. 7A is a schematic plan view of an embodiment of a probe cardaccording to the invention showing probe pins grouped for contact withpads of four dies disposed on the semiconductor substrate of FIG. 5, andassociated look-ahead contacts. FIG. 7B is a schematic plan view ofanother embodiment of a probe card according to the invention with probepins for contact with pads of four dies and associated look-aheadcontacts as depicted in FIG. 5B.

FIG. 8 is a schematic plan view of the active surface of a prior artflip chip showing a redistribution layer (RDL) connecting bond pads toarea array pads.

FIG. 9 is a schematic plan view of an embodiment of a semiconductorsubstrate according to the invention showing multiple flip chip dieshaving an RDL comprising bond pads connected to area array pads, and alook-ahead contact disposed on a die of a first die set (A) connectedvia a trace to a contact on a die of a second die set (B).

FIG. 10 is a plan view of another embodiment of a probe card accordingto the invention showing probe pins arranged for contact with the arraypads disposed on the flip chip die of FIG. 9, and associated look-aheadcontact.

FIG. 11 is a block flow diagram of an embodiment of a process flow forstressing/testing dies on a semiconductor substrate according to theinvention.

FIG. 12 is a schematic plan view of another embodiment of a process flowfor stressing/testing dies according to the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The invention will be described generally with reference to the drawingsfor the purpose of illustrating embodiments only and not for purposes oflimiting the same. The figures illustrate processing steps for use infabricating semiconductor devices in accordance with the presentinvention. It should be readily apparent that the processing steps areonly a portion of the entire fabrication process.

In the current application, the terms “semiconductive wafer fragment” or“wafer fragment” or “wafer” will be understood to mean any constructioncomprising semiconductor material, including but not limited to bulksemiconductive materials such as a semiconductor wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structureincluding, but not limited to, the semiconductive wafer fragments orwafers described above.

One embodiment of a semiconductor substrate fabricated for the testingof dies in accordance with the invention is shown in FIG. 5. Thesubstrate 40′, typically a semiconductor wafer, comprises a plurality ofdies 26′ formed thereon through etching, deposition, or other well knowntechniques, and separated by scribe lines or streets 28′. As depicted inFIG. 5A, in the illustrated embodiment, each of the dies 26′ includes aseries of eight die pads 30′, which is merely exemplary and typicallynumbers 28 to 30.

According to an embodiment of the invention, the substrate 40′ furtherincludes a redistribution layer (RDL) 42′ to redistribute a signalreceived from a test system (tester) at a point proximal to one set ofdies currently in contact with elements of a probe card (“under probe”)to one or more dies located in another section of the substrate notcurrently under probe. By “under probe”, it is meant that the probe pinsof a probe card are placed into contact with pads 30′ of the dies 26′.As shown in FIGS. 5 and 6A, the redistribution layer 42′ compriseslook-ahead contacts 44 a′, 44 b′, each interconnected through aconductive trace (metal line) 46′ to contacts 48 a′, 48 b′,respectively, of dies not currently under probe. As depicted, twolook-ahead contacts are provided, which is merely exemplary, and caninclude, for example, a first contact 44 a′ for receiving a power supplyvoltage (Vcc) and a second contact 44 b′ for receiving a groundpotential (GND) from a source such as an external test system.

In another example depicted in FIG. 5B, the look-ahead contacts caninclude a Vcc contact 44 a″, GND contact 44 b″, and a signal contact 44c″ for receiving signals from a test system that are routed to contact48 c″ on the die. The signal pad 30″ or contact 48 c″ can be unique forreceiving a signal for a particular application to stress or test thedies in a desired fashion. The number of look-ahead contacts can beincreased to add potential for transmitting additional signals to thedies of a remote die set to achieve appropriate stressing or testing ofthe dies. For illustrative purposes, FIG. 5B depicts substrate 40″ withthree look-ahead contacts 44 a″, 44 b″, 44 c″ associated with contacts48 a″, 48 b″, 48 c″, located on each die 26″, which is merely exemplary.

The look-ahead contacts 44 a′, 44 b′ are positioned on the semiconductorsubstrate proximal to dies of a die set to be tested under probe. In theembodiment illustrated in FIGS. 5 and 6A, the look-ahead contacts 44 a′,44 b′ are located in the streets 28′ adjacent each die 26′ of a firstdie set (Section A), and electrically connected by a conductive trace46′ to a contact 48 a′, 48 b′ associated with a die 26′ of a second dieset (Section B).

In another embodiment of a semiconductor substrate according to theinvention, shown in FIG. 6B, the look-ahead contacts 44 a′, 44 b′ can belocated on the dies 26′ themselves and/or on the semiconductor substrate40′, for example, in the streets 28′ between dies 26′. FIG. 6B alsoillustrates the connection of separate look-ahead contacts 44 a′, 44 b′and traces 46′ to each die in a second die set (Section B) which allowsfor more individualized testing of dies in the second die set. FIG. 6Cillustrates another embodiment of a semiconductor substrate in which thelook-ahead contacts 44 a′, 44 b′ (Section A) each connect to a contact48 a′, 48 b′ of more than one die 26′ of a second die set (Section B).By interconnecting a look-ahead contact 44 a′, 44 b′ to a plurality ofdies 26′ in a second die set (e.g., Section B), the number of look-aheadcontacts and corresponding probe pins needed to connect with dies in asecond die set can be significantly reduced. Contacts 48 a′, 48 b′ ofFIG. 6C are located off the dies on the semiconductor substrate, and canbe interconnected to circuitry (e.g., BISS and/or BIST circuitry)located on the die (not shown). FIG. 6D depicts yet another embodimentof a semiconductor substrate of the invention in which the look-aheadcontacts 44 a′, 44 b′ (shown as located in street 28′) of a first dieset (Section A) are routed to contacts 48 a′, 48 b′ disposed on die 26_(a)′ of a second die set (Section B). The signal can also be directlyrouted to the appropriate die pads 30 a′, 30 b′ of die 26 _(b)′ withinthe second die set. As shown in the illustrated examples, the conductivetraces 46′ can run along streets 28′ between dies and/or over dies 26′.The locations and configurations of the look-ahead contacts 44 a′, 44b′, trace connections 46′, and contacts 48 a′, 48 b′ or otherconnections (e.g., die pads 30 a′, 30 b′) to the dies of a second dieset illustrated in FIGS. 6A-6D, can be provided in various combinationsor other variations as appropriate to achieve a stressing/testingprotocol according to the invention.

The RDL 42′ can be formed on the semiconductor substrate 40′ inconjunction with processing steps to form the pads 30′, using knownmethods in the art, for example, by chemical vapor deposition (CVD),patterning, etching, electroplating, stenciling, and screen printing.The look-ahead contacts 44′ can comprise a conductive metal or metalalloy such as aluminum, aluminum alloy, titanium, tungsten,titanium-tungsten alloy, tantalum, platinum, copper, or refractory metalsilicide, among others. The traces 46′ can comprise a metal or alloysuch as copper, aluminum, silver or gold, among others, a conductivepolymer material, or other suitable electrically conductive material.

A probe card 18′, as depicted in FIG. 7A, can be used in conjunctionwith a semiconductor substrate 40′ as depicted in FIG. 5, to probe thepads 30′ and Vcc, GND look-ahead contacts 44 a′, 44 b′ to provide therequired power and ground to implement the circuitry of the dies 30′being stressed/tested on the semiconductor surface 40′. The probe card18′ includes a substrate 21′ with probe pins 22′ for providing theappropriate power, ground (e.g., Vcc, GND), and signals to the die pads30′ of the dies under probe. The probe card 18′ further includes probepins 49 a′, 49 b′ to provide the requisite power supply voltage (Vcc) toVcc look-ahead contact 44 a′ and ground potential (GND) to GNDlook-ahead contact 44 b′. Another embodiment of a probe card 18″ isdepicted in FIG. 7B, and includes additional probe pins such as pin 49c″ for supplying other power and signals (e.g., control signals) toadditional look-ahead contacts such as look-ahead contact 44 c″ asillustrated in FIG. 5B, to initiate a stress or test operation, forexample.

With a flip chip die configuration, the semiconductor chip is mounted inan upside-down manner onto a carrier substrate and electrically coupledby means of solder bumps provided on the active surface of the chip. Asdepicted in FIG. 8, an RDL 36 is typically used in flip chipconstructions to redistribute bond pads 30 to area array pads 38 thatare spaced at a fine pitch on the active surface of the chip 26(fc).Circuit probing of a flip chip 26(fc) can be performed by using a probecard that is designed to be electrically coupled to the internalcircuitry of the flip chip via the area array pads 38.

Referring to FIG. 9, to implement the method of the invention fortesting a substrate 40″ comprising flip chip configurations, the RDL 36″for redistributing the flip chip bond pads 30″ to area array pads 38″can be fabricated to include look-ahead contacts, for example, contact44″, located on or in connection with flip chip dies 26(fc)″ of a firstdie set (Section A), connected to a trace 46″ for routing the requisitepower, ground, and signals to a contact, for example, contact 42″ on orconnected to one or more dies 26(fc)″ of a second die set (Section B)located on the semiconductor substrate 40″ prior to or after the currentprobe card position. As depicted in FIG. 10, a probe card 18′″ can beconfigured to include probe pins 22′″ for contact with the pads 38″ ofdie 26(fc)′″ of the first die set (A) and a probe pin 49′″, for example,for contact with the look-ahead contact 44″ associated with the firstset of dies (A). The look-ahead contacts 44″ and contacts 42″ can belocated on the die itself (as shown), in streets 28″ between dies,and/or along the periphery of the substrate 40″.

Stress/Test Circuitry

The present system can be utilized to cause stressing and/or testing ofdies both under probe and outside of the current probe head position,that is, not currently in contact with the probe elements and located onthe semiconductor substrate (wafer) at a position previous to or afterthe current probe head position. The stress/test mode can be run usingbuilt-in self-stress (BISS) circuitry and/or a built-in self test (BIST)circuitry that is incorporated into the die or the semiconductorsubstrate and connected with the die, for example. The stress/test modecan also be run via the typical mode of access as described in productdata sheets or at an accelerated level by utilizing the appropriatesignals, Vcc power and GND ground potential, routed from an externaltest circuit to the die circuitry. BISS circuitry. A built-inself-stress (BISS) circuit can be used to implement stressing of memorycells and circuit nodes, for example, on the dies (chips or parts),without verification of the parts functionality. Referring to FIG. 5,the BISS circuit (not shown) can be incorporated into the integratedcircuit of the dies 26′ themselves, in a street 28′ of the semiconductorsubstrate (wafer) 40′, in an individual die location on the substrate inplace of a die on that site, or in the location of a mutant die (notfully formed die) along the edge of a semiconductor substrate as areplacement to the mutant die on that site. The BISS circuit has thecapability to exercise (stress) the dies, but lacks the ability to readand compare data to determine whether the die is functional.

The BISS circuit typically includes circuits to sequence through addresslines, an address counter, an oscillator, a clock (CLK) generator, atimer, and other controls. A BISS circuit can comprise the signalswithin a die that are necessary to cause stress on the die, and caninclude activities that occur during a burn-in testing. For example, thedie can be stressed by operating it for a period of time at differenttemperature cycles, including high temperatures and acceleratedvoltages, by causing cell plate to digit line stress, by exposing thedie different patterns within its array, by opening multiple rows at thesame time, by holding rows open, by increasing or decreasing timingcycles, by pulsing row lines, by conducting faster cycles for dieheating, among other operations.

A semiconductor device can be stressed, for example, by changing thetiming signals to the limits, or outside, of the intended parametersassociated with normal operation. For example, a semiconductor devicecan be stressed by controllably adjusting the time durations of timingsignals, and/or the voltage levels of the timing signals so that thetime durations and voltage levels approach a value that is at or abovethe boundary of a specified margin. This adjustment alters thesemiconductor device operation such that, if the device has a defect, itwill fail and can then be identified.

Implementation of a BISS circuitry minimally requires a power supplyvoltage (Vcc) and a ground supply voltage (GND) to supply power to thecircuitry. In one embodiment of implementing a stress sequence via aBISS circuit according to the invention, the dies 26′ include separatepads 30′ for receiving a power supply voltage (Vcc) and a groundpotential (GND), and the look-ahead contacts disposed on thesemiconductor substrate 40′ comprise a Vcc contact 44 a′ for receivingVcc power and a GND contact 44 b′ for receiving GND, as depicted in FIG.5. In another embodiment depicted in FIG. 5B, the die 26′ includes a diepad 30″ and additional look-ahead contacts such as contact 48 c″ forreceiving a signal, for example, a trigger signal, RAS, CAS,WRITE_ENABLE, I/O signals, or other signal, for implementing the BISSoperation. Separate look-ahead contacts can be provided for each signalto be routed to the die not under probe.

A probe card 18′, as depicted in FIG. 7A, can be used to probe the pads30′ and look-ahead contacts 44 a′, 44 b′ of a semiconductor substrate40′ as depicted in FIG. 5, for example. Probe pins 22′ can be utilizedto provide power and ground (Vcc, GND) to the appropriate die pads 30′of the dies under probe. The probe card 18′ further includes at leasttwo probe pins 49 a′, 49 b′ to provide a power supply voltage (Vcc) tothe Vcc look-ahead contact 44 a′ and a ground potential (GND) to the GNDlook-ahead contact 44 b′. As depicted in FIG. 7B, the probe card 18″ canfurther include additional probe pins such as pin 49 c″ for supplyingother power and signals, including control signals to look-aheadcontacts such as contact 44 c′, for example, as depicted in FIG. 5B, forimplementation of the BISS operation.

An embodiment of a BISS implementation step according to the inventioncan be described with reference to FIGS. 5-5A, and the probe card 18′depicted in FIG. 7A. The probe pins 22′ of the probe card 18′ are placedin contact with die pads 30′ of the dies 26′ of a first die set (SectionA) and the probe pins 49 a′, 49 b′ are placed in contact, respectively,with the look-ahead contacts 44 a′, 44 b′ associated with the first dieset (A). The probe card 18′ supplies the required power and ground (Vcc,GND) through a probe pin 22′ to appropriate Vcc, GND pads 30′ on thedies (for those dies currently under probe) and through probe pins 49a′, 49 b′, respectively to the Vcc, GND look-ahead contacts 44 a′, 44 b′for routing through traces 46′ to the Vcc, GND contacts 48 a′, 48 b′associated with the dies 26′ of the second die set (Section B), whichare not currently in direct contact with probe pins 22′. The dies of thesecond die set can be located on the semiconductor substrate at alocation before or after the current probe head position.

As depicted in FIGS. 6C-6D, the Vcc look-ahead contact 44 a′ in a firstdie set (e.g., Section A) can be connected by traces 46′ to the Vcccontacts 48 a′ (and/or Vcc pads 30 a′) of two or more dies in a seconddie set (e.g., Section B). Likewise, the GND look-ahead contact 44 b′ inSection A can be connected by traces 46′ to the GND contacts 48 b′(and/or GND pads 30 b′) of two or more dies in a second die set (e.g.,Section B). In such an arrangement, when the probe pins 49′ are broughtinto contact with the look-ahead contacts 44 a′, 44 b′, power issupplied to all the dies of the second die set (B) at about the sametime via the trace 46′.

In another embodiment, the BISS operation can be initiated upon receiptof the requisite power and ground (Vcc, GND) and appropriate signalsranging from a single trigger signal to all signals required for theparticular BISS operation utilized. Referring to FIG. 5B, power andground (Vcc, GND) and signals can be supplied to appropriate Vcc, GNDand signal pads 30″ on the dies under probe, and to the Vcc, GND andsignal look-ahead contacts 44 a″, 44 b″, 44 c″ (e.g., in Section A) forrouting through traces 46″ to the Vcc, GND and signal contacts 48 a″, 48b″, 48 c″ for the dies not currently under probe (e.g., Section B).Although a single signal look-ahead contact 44 c″ is depicted,additional signal look-ahead contacts can be provided to accommodaterouting the required signals to signal contacts such as 48 c″ (or to diepads similar to routing to die pads 30 a′, 30 b′, as shown in FIG. 6D)for the dies not under probe to implement the BISS operation employed ina particular application.

The BISS operation, once initiated, automatically performs designed-instress functions. Thus, by providing the requisite power, ground, andsignals to a look-ahead contact at the current probe head position,stressing of dies not currently in contact with probe elements of theprobe head can be achieved.

In a subsequent Probe Test, broken elements can be detected and repairedout. In this way, dies that would have eventually failed during aburn-in test (BURN) can be recovered at probe.

BIST circuitry. A built-in self-test (BIST) circuit can be used toautomatically test the memory devices upon initiating a BIST operation,which typically involves challenging the part and retrieving informationabout the part to determine if it fails or is still functioningappropriately. A BIST circuit is conventionally designed to identifywhether the die is defective, and the type of defect. BIST circuitryoften generates stimulus for the circuitry being tested, which generatesresponses to be compared by the BIST circuit against expected responses.Referring to FIG. 5, as with a BISS circuit, a BIST circuit (not shown)can be incorporated into the integrated circuitry of the dies 26′themselves, in a street 28′ of the semiconductor substrate 40′, as areplacement for a die in an individual die location on the substrate, oras a replacement for a mutant die in a mutant die location on thesubstrate, typically along the edge of the substrate.

The BIST circuitry typically includes circuits to sequence throughaddress lines, an address counter, an oscillator, a clock (CLK)generator, a timer, and other controls, for example, associated with aREAD or WRITE operation, and a COMPARE operation. The BIST circuit wouldalso require the routing of at least one I/O so that failed dies couldbe detected in die sets (DS) not currently under probe. A BIST circuitcomprises the signals that are necessary to generate a clock (CLK)signal, and run through a predefined number of programmed operationstriggered by the edges of the CLK signal.

Implementing the BIST circuitry minimally requires Vcc power and a GNDground potential, and the ability to retrieve data from the die as towhether or not the die passed or failed the BIST testing, for example,an input/output (I/O) pin or a fuse incorporated into the die that willbe blown upon failure, among others.

An embodiment of implementing a BIST circuit according to the inventioncan be described with reference to FIG. 5B. As shown, look-aheadcontacts 44 a″, 44 b″ for Vcc and GND, and additional look-aheadcontacts such as 44 c″ can be provided for routing signals as requiredfor the BIST operation. Utilizing a probe card 18″ (FIG. 7B), Vcc power,GND ground, and signals (e.g., I/O) are supplied through the probe pins22″ to the pads 30″ of the dies 26″ under probe (e.g., Section A), andthrough the probe pins 49 a″, 49 b″, 49 c″ to the look-ahead contacts 44a″, 44 b″, 44 c″, associated with the first die set (A). The requiredVcc power, GND and signals are routed via the traces 46″ to the Vcc,GND, and signal contacts 48 a″, 48 b″, 48 c″, respectively, on orconnected with the dies 26″ of the second die set (Section B), which arecurrently not under probe.

Upon receiving the Vcc, GND, and any required signals, the BIST circuitis activated. The BIST operation then automatically performs designed-intest functions, and stores the data from the test results in a statusregister. Data from each die can be fed back from the dies, for example,through an I/O contact to the external test circuit. By providing therequisite power, ground, and signals to look-ahead contacts at thecurrent probe head position, testing of dies not currently under probecan be achieved.

Thus, in certain applications, a BISS circuit can be activated byutilizing a minimum of two die pads 30′ and two look-ahead contacts 44a′, 44 b′, and associated traces 46′ for providing Vcc and GND to thedie circuitry (FIG. 5). In a BIST and other BISS applications, requiredsignals are routed through appropriate die pads 30″ for dies under probeand look-ahead contacts 44 c″ for the dies not under probe (FIG. 5B).

In some instances, additional signals can be provided that enhancestressing and/or testing, and/or run a test operation that is special toa particular die. The number of look-ahead contacts and traces can beincreased to accommodate such additional signals, with the maximumnumber of look-ahead contacts and traces being typically limited by theamount of physical space available on the semiconductor wafer.

Stress/Test using typical die circuitry. Stress and/or die testing canalso be achieved by running the circuitry of the dies (used for normaloperation) or, more typically, test mode circuitry built into the diefor testing the die, by the application of power, ground, and requiredsignals from an external test circuit, such as the test system 16depicted in FIG. 1. A test system generally includes microprocessorcircuitry, a system clock, and a memory for performing testing routinesand storing and processing the results.

For stressing the dies, the test system sends Vcc power, GND groundpotential, and necessary signals to stress the die circuitry, forexample, power supply voltage (Vcc), ground potential (GND),input/output (I/O) signals, address signals, clock signals, datasignals, and other signals as necessary for the die circuitry to beproperly stressed. Stressing a die typically involves applying higherVcc, opening multiple rows, holding rows open or pulsing the row lines,grounding or raising the cell plate voltages versus the digit linevoltage, and the like.

For memory testing, the test circuit sends predetermined voltages andsignals to a memory device of the die including, for example, powersupply voltage (Vcc), ground voltage (GND), input/output (I/O) signals,address signals, clock signals, data signals, and other signals asnecessary for the die to be properly tested. The test system typicallywrites test patterns to the memory device, reads the data stored in thememory devices, and determines whether a logic level written is presentfor a certain duration by comparing the data to a predetermined datapattern at a time referenced to a system clock signal CLK, in order todetect memory speed, timing, failure, and so forth. Based on the resultsof the tests, the test circuit determines if the memory device(s) of thedie is faulty, and generates a yield map of the results.

Referring to FIG. 5, in an embodiment of a method of stressing dies(only) according to the invention by implementing normal die circuitryor a test mode circuitry, Vcc power and ground GND can be routed from atest system utilizing a probe card 18′ (FIG. 7A) through probe pins 22′into the appropriate die pads 30″ of the dies 26″ currently under probe(Section A, for example), and through the probe pins 49 a′, 49 b′ intoVcc, GND look-ahead contacts 44 a′, 44 b′ to Vcc, GND contacts 48 a′, 48b′ of dies 26′ not under probe (Section B).

An embodiment of a method of stressing and/or testing dies according tothe invention involving the normal (typical) die circuitry, or a testmode circuitry, can be described with reference to FIG. 5B. A testsystem sends Vcc, GND and signals necessary for stressing and/or testingdies utilizing a probe card 18″, as depicted in FIG. 7B, through theprobe pins 22″ into the appropriate die pads 30″ of the dies 26″ underprobe (e.g., Section A) and through the probe pins 49 a″, 49 b″, 49 c″into the Vcc, GND, and signal look-ahead contacts 44 a″, 44 b″, 44 c″via the traces 46″ to Vcc, GND, signals contacts 48 a″, 48 b″, 48 c″ onor connected to the dies 26″ not currently under probe (Section B). Datacan be read from each die, determined as passing or failing, and thenfed back from the dies to the test circuit.

Thus, stressing and/or memory testing of dies not currently under probebut within probe bead positions that are previous to or occurring afterthe current probe head position, can be achieved according to theinvention utilizing typical circuitry (or test mode circuitry).

Implementation

An embodiment of a wafer probe test according to the invention isillustrated in the process flow diagram of FIG. 11. Different circuitryas discussed above (BIST, BISS, typical die circuitry or a test modecircuitry) can be employed.

In implementing an embodiment of a probe test according to theinvention, a semiconductor substrate (wafer) 40′ such as that depictedin FIG. 5, is positioned within a test system such as that illustratedand described with reference to FIG. 1. The test system includes a probecard 18′, as exemplified in FIG. 7A, that is configured with probe pins22′ for contact with die pads 30′ of each die 26′ within a defined setof dies (A-D) on the substrate 40′. The probe card 18′ also includesprobe pins 49 a′, 49 b′ for contacting the Vcc and GND look-aheadcontacts 44 a′, 44 b′ positioned proximal to dies 26′ of a die set thatis currently under probe. The probe card is structured with anappropriate number of probe pins 22′ to correspond to the number of diepads 30′ of dies 26′, and probe pins 49 a′, 49 b′ to correspond to thelook-ahead contacts 48 a′, 48 b′ to be contacted under the current probecard position.

In an embodiment of a probe test according to the invention, the probecard 18′ can be stepped across the semiconductor substrate 40′ startingwith die set A, and proceeding in sequence across the substrate to diesets B, C and D, as depicted in FIG. 5.

As diagrammed in FIG. 11, implementation of the probe test can involvean optional initial Test Step 50 to determine Opens and Shorts in allprobe head positions (i.e., A through D). The probe card 18′ can besequentially stepped through each probe head position to test for shortsand generate a map of the locations of bad (shorted) devices (dies). Inthe subsequent stress/test phases, shorted dies will not be providedwith “look-ahead signals” in order to avoid damaging the substrate(wafer) or other dies on the substrate.

Where a preliminary screening test to identify opens/shorts of dies isnot initially conducted, the probe electronics can be utilized to detectbad parts and to shutdown signals to those units automatically.

After completion of the initial open/shorts Test Step 50 (ifimplemented), stress/test steps are conducted on the dies on thesemiconductor substrate.

In Step 52, in the illustrated example, probe card 18′ is positioned ata first probe head position at a first die set (e.g., Section A). Theprobe pins 22′ electrically probe die pads 30′, and the probe pins 49a′, 49 b′ probe the look-ahead contacts 44 a′, 44 b′. In the presentillustration, the look-ahead contacts 44 a′, 44 b′ are utilized forrouting Vcc power and ground GND to dies located on the semiconductorsubstrate 40′ that are not currently under probe (i.e., not in contactwith probe pins 22′).

In Step 54, stressing is performed to detect defects in the dies thatmay fail overtime. Stressing can be performed to accelerate failure byapplying elevated power supply voltage levels and by heating and coolinga die in a chamber, and by accessing certain circuit nodes withdifferent voltage levels that result in stress on a memory cell or thephysical/electrical nature of a die. The test circuit provides thenecessary power and ground to implement the stress operation or sequencethrough the probe pins 22′ to the appropriate die pads 30′ and circuitry(not shown) of the dies 26′ in a first die set currently under probe(Section A), and through probe pins 49 a′, 49 b′ to the look-aheadcontacts 44 a′, 44 b and through traces 46′ to contacts 48 a′, 48 b′(and/or pads 30 a′, 30 b′; FIG. 6D) of dies 26′ in a second die set(e.g., Section B) that is remote from the probe head 18′ (i.e., notcurrently under probe). The Vcc power and GND can be suppliedsubstantially simultaneously to the dies in the first die set (A) andthe second die set (B) such that the stress operation in the two (ormore) die sets overlaps or occurs substantially simultaneously. Thus, astress operation can be performed substantially simultaneously on thedies of both the first die set (A) under probe and the second die set(B) without direct probing of the die pads 30′ of the dies of second dieset (B).

Upon completion of Stressing Step 54, testing-in of the dies 26′ in thefirst die set (A) is conducted in Step 56. With the probe card 18′remaining in position with the probe pins 22′ in contact with the pads30′ of the dies of the first die set (A), the necessary Vcc power andGND are furnished to the dies under probe to implement testing of thedies, such as data retention tests and/or data march tests. Based on theresults of the tests, the test system determines if the die is faulty,and can generate a yield map of the results.

Upon completion of the testing of the dies of the first die set (A), theprobe card 18′ is then moved to the next probe head position with theprobe pins 22′ in contact with the pads 30′ of the dies 26′ of thesecond die set (B), and the probe pins 49 a′, 49 b′ in contact with thelook-ahead contacts 44 a′, 44 b′ associated with the second die set (B)(Step 58).

In Step 60, full testing of the dies 26′ in the second die set (B) nowunder probe can be conducted substantially simultaneously with stressingof the dies 26′ in the third die set (C) (not currently under probe)connected through traces 46′ to the look-ahead contacts 44 a′, 44 b′associated with the second die set (B). To implement Step 60, probe pins22′ electrically probe the die pads 30′ of the dies in the second dieset (B), and the necessary Vcc power and GND ground (and signals) toimplement the testing operation are sent by the external test systemthrough the probe pins 22′ to die pads 30′ of the dies 26′ under probeto implement testing of the dies. At about the same time, probe pins 49a′, 49 b′ electrically probe the look-ahead contacts 44 a′, 44 b′associated with the dies of the second die set (B). The test systemsends the necessary Vcc power and GND through the probe pins 49 a′, 49b′ to the look-ahead contacts 44 a′, 44 b, which are routed through theRDL traces 46′ into the contacts 48 a′, 48 b′ of dies of the third dieset (C) (not currently under probe). Upon receiving the Vcc and GND, astress sequence can be implemented on the dies of the third die set (C).

Upon completion of the testing of the dies in the second die set (B)(currently under probe) and the “remote” stressing of the dies in thethird die set (C) (not currently under probe), Step 58 is repeated andthe probe head 18′ is moved to the next die set (i.e., from the seconddie set (B) to the third die set (C)), where the probe pins 22′ arebrought into contact with the pads 30′ of the dies of the third die set(C), and the look-ahead contacts 44 a′, 44 b′ associated with the thirddie set (C). Stress/Test Step 60 is repeated to test the dies in thethird die set (C) and stress the dies in the fourth die set (D) via theVcc power and GND furnished to the look-ahead contacts 44 a′, 44 b′ ofthe third die set (C). The Stress and Test Operations can be performedsubstantially simultaneously to minimize the total time of the twooperations.

Steps 58 and 60 are repeated until the remaining die sets (i.e., thefourth die set (D) in the illustrated example) are tested. Thus, inrepeating Step 58, probe card 18′ is moved to the next probe headposition, and then Step 60 is repeated to test the dies (e.g., memorydevices) of the die set under probe and to stress the dies remotelyconnected to the associated look-ahead contacts of the die set currentlyunder probe.

Another embodiment of a probe test protocol according to the inventionis illustrated in FIG. 12 in which a probe card can be stepped across asemiconductor substrate (e.g., wafer). While the tester is at a givenposition on the wafer, stressing can be performed on dies that arepositioned on the wafer at future probe head positions. As illustrated,the probe head is sequentially stepped across the wafer starting atPosition 1 and proceeding through Positions 2-16.

In the illustrated example, the dies on the wafer comprise BISScircuitry. With the probe head in “Position 1” on the wafer, Step 1 caninvolve conducting a BISS stress on the dies under probe. With the probehead remaining in Position 1 on the wafer, Step 2 involves a typicalprobe test and repair flow of the dies under probe. Simultaneously, aBISS stress can be conducted on the dies in Position 2 on the wafer bythe routing of the required power, ground and signals from the probethrough the look-ahead contacts (associated with the die set at Position1) to the dies in Position 2.

The probe head is then moved to “Position 2” on the wafer, and Step 3involves conducting a probe test and repair flow of the dies currentlyunder probe, while conducting a BISS stress of the dies in Position 3 onthe wafer by routing required power, ground and signals via thelook-ahead contacts (associated with the dies under probe in Position 2)to the dies in Position 3.

The probe head is then moved to “Position 3” on the wafer, and Step 4 isconducted involving a probe test and repair flow of the dies under probein Position 3. Simultaneously, a BISS stress of the dies in Position 4on the wafer can be conducted by the routing of required power, ground,and signals via look-head contacts (associated with the die under probein Position 3) to the dies in Position 4.

The probe head is moved on to “Position 4” on the wafer, and continuesthrough to Position 16, conducting a test and repair flow of the diesunder probe, and simultaneous stressing of the dies connected to thelook-ahead contacts associated with the dies currently under probe.

The stress operation on the dies is essentially “free” to themanufacture using the method of the invention, in that the stressoperation can be conducted during the testing protocol and require noadditional time in the testing protocol for it to be implemented.Furthermore, the use of the invention assures higher yields per wafer byexposing the dies to an increased amount of stress prior to beingsubjected to the probe test and repair flow.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-81. (canceled)
 82. A semiconductor substrate comprising: a first dieoperable to be tested during a first time interval; and one or moreadditional dies operable to be stressed during the first time interval;and a contact proximal to the first die and electrically connected to atleast one of the one or more additional dies.
 83. The semiconductorsubstrate of claim 1 further comprising built-in self-testing (“BIST”)circuitry operable in conjunction with the first die.
 84. Thesemiconductor substrate of claim 83 wherein said BIST circuitry isprovided about a periphery of said substrate.
 85. The semiconductorsubstrate of claim 83 wherein said BIST circuitry is provided in one ormore streets between dies on said substrate.
 86. The semiconductorsubstrate of claim 83 wherein said BIST circuitry is provided on saidfirst die.
 87. The semiconductor substrate of claim 82 furthercomprising built-in self-stressing (“BISS”) circuitry operable inconjunction with the one or more additional dies.
 88. The semiconductorsubstrate of claim 87 wherein said BISS circuitry is provided about aperiphery of said substrate.
 89. The semiconductor substrate of claim 87wherein said BISS circuitry is provided in one or more streets betweendies on said substrate.
 90. The semiconductor substrate of claim 87wherein said BISS circuitry is provided on one or more of saidadditional dies.
 91. The semiconductor substrate of claim 82 furthercomprising built-in self-test (“BIST”) circuitry operable in conjunctionwith the first die and built-in self-stressing (“BISS”) circuitryoperable in conjunction with the one or more additional dies. 92-98.(canceled)
 99. A semiconductor substrate, comprising: a first dieoperable to be tested during a first time interval; one or moreadditional dies operable to be stressed during the first time interval;and one or more look-ahead contacts for implementing a stress operationon the one or more additional dies.
 100. The semiconductor substrate ofclaim 99 wherein the look-ahead contacts provide one or more voltagepaths for providing a power supply voltage to the one or more additionaldies.
 101. The semiconductor substrate of claim 99 wherein thelook-ahead contacts provide one or more voltage paths for providing aground supply voltage to the one or more additional dies.
 102. Thesemiconductor substrate of claim 99 wherein the look-ahead contactsprovide one or more paths for providing a signal to the one or moreadditional dies.
 103. The semiconductor substrate of claim 99 whereinthe look-ahead contacts are provided about a periphery of the substrate.104. The semiconductor substrate of claim 99 wherein the look-aheadcontacts are provided in one or more streets between dies on thesubstrate.
 105. The semiconductor substrate of claim 99 wherein thelook-ahead contacts are provided on the first die.
 106. A semiconductorsubstrate comprising; a first die operable to be tested during a firsttime interval; one or more additional dies operable to be stressedduring the first time interval; and a contact proximal to the first dieconnected by a conductive trace to at least one of the one or moreadditional dies.
 107. The semiconductor substrate of claim 106 whereinthe contact comprises a power supply voltage (Vcc) contact and theconductive trace provides a path for routing a power supply voltage tothe one or more additional dies.
 108. The semiconductor substrate ofclaim 106 wherein the contact comprises a ground potential (GND) contactand conductive trace provides a path for routing a GND ground signal tothe one or more additional dies.
 109. The semiconductor substrate ofclaim 106 wherein the contact comprises a signal contact and theconductive trace provides a path for routing a signal for initiating astress operation to the one or more additional dies.
 110. Thesemiconductor substrate of claim 106 wherein the conductive trace issituated at a periphery of the substrate.
 111. The semiconductorsubstrate of claim 106 wherein the conductive trace is situated in astreet between dies on the substrate.
 112. The semiconductor substrateof claim 106 wherein the conductive trace is situated over at least oneof the one or more additional dies.
 113. The semiconductor substrate ofclaim 106 wherein the conductive trace is part of a redistributionlayer. 114-116. (canceled)
 117. A semiconductor substrate, comprising: afirst die operable to be tested during a first time interval; one ormore additional dies operable to be stressed during the first timeinterval; and one or more look-ahead contacts operative in conjunctionwith one or more conductive traces for stressing the one or moreadditional dies.
 118. The semiconductor substrate of claim 117 whereinthe look-ahead contacts operate in conjunction with the conductivetraces to provide one or more voltage paths for providing a power supplyvoltage to the one or more additional dies.
 119. The semiconductorsubstrate of claim 117 wherein the look-ahead contacts operate inconjunction with the conductive traces to provide one or more voltagepaths for providing a ground supply voltage to the one or moreadditional dies.
 120. The semiconductor substrate of claim 117 whereinthe look-ahead contacts operate in conjunction with the conductivetraces to provide one or more paths for providing a signal to the one ormore additional dies.
 121. A semiconductor substrate, comprising: afirst die operable to be tested during a first time interval; and one ormore additional dies operable to be stressed during the first timeinterval and tested during a second time interval; and a contactproximal to the first die connected by a conductive trace to at leastone of the one or more additional dies.
 122. A semiconductor substrate,comprising: a first die operable to be tested during a first timeinterval; one or more additional dies connected by a trace to a contactproximal to the first die and operable to be stressed during the firsttime interval and tested during a second time interval; one or moreother dies connected by a trace to a contact proximal to the one or moreadditional dies and operable to be stressed during the second timeinterval.
 123. A semiconductor substrate, comprising: a first dieoperable to be tested during a first time interval; one or moreadditional dies connected by a trace proximal to the first die andoperable to be stressed during the first time interval and tested duringa second time interval; and one or more other dies connected by a traceto a contact proximal to the one or more additional dies and operable tobe stressed during the second time interval and tested during a thirdtime interval.
 124. A method for testing dies on a semiconductorsubstrate, comprising the steps of: testing a first die during a firsttime interval by delivering a signal through a contact pad to the firstdie; and stressing one or more additional dies during the first timeinterval by delivering at least one of power, ground, and a signalthrough one or more look-ahead contacts situated proximal to the firstdie and electrically connected to the one or more additional dies. 125.The method of claim 124 wherein the step of testing the first diecomprises initiating a built-in self-testing (“BIST”) operation. 126.The method of claim 124 wherein the step of stressing the one or moreadditional dies comprises initiating a built-in self-stressing (“BISS”)operation.
 127. The method of claim 124 wherein the step of testing thefirst die comprises initiating a built-in self-testing (“BIST”)operation, and the step of stressing the one or more additional diescomprises initiating a built-in self-stressing (“BISS”) operation. 128.The method of claim 124 wherein the steps of testing and stressing occurat substantially the same time.
 129. The method of claim 124 wherein thesteps of testing and stressing occur at substantially the same time toachieve parallel testing and stressing.
 130. A method for testing dieson a semiconductor substrate, comprising the steps of: testing a firstdie during a first time interval; and stressing one or more additionaldies during the first time interval using one or more look-aheadcontacts.
 131. A method for testing dies on a semiconductor substrate,comprising the steps of: testing a first die during a first timeinterval; and stressing one or more additional dies during the firsttime interval using one or more look-ahead contacts to provide a powersupply voltage to the one or more additional dies.
 132. A method fortesting dies on a semiconductor substrate, comprising the steps of:testing a first die during a first time interval; and stressing one ormore additional dies during the first time interval using one or morelook-ahead contacts to provide a ground supply voltage to the one ormore additional dies.
 133. A method for testing dies on a semiconductorsubstrate, comprising the steps of: testing a first die during a firsttime interval; and stressing one or more additional dies during thefirst time interval using one or more look-ahead contacts to provide asignal to the one or more additional dies.
 134. A method for testingdies on a semiconductor substrate, comprising the steps of: testing afirst die during a first time interval; and stressing one or moreadditional dies during the first time interval using one or morelook-ahead contacts connected to the one or more additional dies byconductive traces.
 135. A method for testing dies on a semiconductorsubstrate, comprising the steps of: testing a first die during a firsttime interval; and stressing one or more additional dies during thefirst time interval using one or more look-ahead contacts connected tothe one or more additional dies by conductive traces to provide a powersupply voltage to the one or more additional dies.
 136. A method fortesting dies on a semiconductor substrate, comprising the steps of:testing a first die during a first time interval; and stressing one ormore additional dies during the first time interval using one or morelook-ahead contacts connected to the one or more additional dies byconductive traces to provide a ground supply voltage to the one or moreadditional dies.
 137. A method for testing dies on a semiconductorsubstrate, comprising the steps of: testing a first die during a firsttime interval; and stressing one or more additional dies during thefirst time interval using one or more look-ahead contacts connected tothe one or more additional dies by conductive traces to provide a signalto the one or more additional dies.
 138. A method for testing dies on asemiconductor substrate, comprising the steps of: testing a first dieduring a first time interval; and stressing one or more additional diesduring the first time interval using one or more look-ahead contactsoperative in conjunction with one or more conductive traces.
 139. Amethod for testing dies on a semiconductor substrate, comprising thesteps of: testing a first die during a first time interval; andstressing one or more additional dies during the first time intervalusing one or more look-ahead contacts operative in conjunction with oneor more conductive traces to provide a power supply voltage to the oneor more additional dies.
 140. A method for testing dies on asemiconductor substrate, comprising the steps of: testing a first dieduring a first time interval; and stressing one or more additional diesduring the first time interval using one or more look-ahead contactsoperative in conjunction with one or more conductive traces to provide aground supply voltage to the one or more additional dies.
 141. A methodfor testing dies on a semiconductor substrate, comprising the steps of:testing a first die during a first time interval; and stressing one ormore additional dies during the first time interval using one or morelook-ahead contacts operative in conjunction with one or more conductivetraces to provide a signal to the one or more additional dies.
 142. Amethod for testing dies on a semiconductor substrate, comprising thesteps of: testing a first die during a first time interval; stressingone or more additional dies during the first time interval using one ormore look-ahead contacts connected to the one or more additional dies;and testing the one or more additional dies during a second timeinterval.
 143. A method for testing dies on a semiconductor substrate,comprising steps of: testing a first die during a first time interval;stressing one or more additional dies during the first time intervalusing one or more look-ahead contacts connected to the one or moreadditional dies; testing the one or more additional dies during a secondtime interval; and stressing other dies during the second time intervalusing one or more look-ahead contacts connected to the other dies. 144.A method for testing dies on a semiconductor substrate, comprising thesteps of: testing a first die during a first time interval; stressingone or more additional dies during the first time interval using one ormore look-ahead contacts connected to the one or more additional dies;testing the additional dies during a second time interval; stressingother dies during the second time interval using one or more look-aheadcontacts connected to the other dies; and testing the other dies duringa third time interval.
 145. A method for testing dies on a semiconductorsubstrate, comprising steps of: testing a first die during a first timeinterval; stressing one or more additional dies during the first timeinterval using one or more look-ahead contacts connected to the one ormore additional dies; testing the additional dies during a second timeinterval; stressing other dies during the second time interval using oneor more look-ahead contacts connected to the other dies; testing theother dies during a third time interval; and stressing and testingremaining dies on the substrate during one or more subsequent timeintervals.
 146. A method for testing dies on a semiconductor substrate,comprising the steps of: testing a first die during a first timeinterval by routing signals to the first die to initiate a testsequence; stressing one or more additional dies during the first timeinterval by routing a power supply voltage and a ground through alook-ahead contact and a trace connected to the one or more additionaldies, the look-ahead contact located proximal to the first die; testingthe one or more additional dies during a second time interval by routinga signal through the look-ahead contact to the one or additional dies;stressing other dies during the second time interval by routing a powersupply voltage and a ground through a look-ahead contact and a traceconnected to the other dies, the look-ahead contact located proximal tothe one or more additional dies; testing the other dies during a thirdtime interval by routing a signal through the look-ahead contactconnected to the other dies; and continuing the steps of stressing andtesting remaining dies on the substrate during one or more subsequenttime intervals.
 147. A substrate, comprising; a first die comprising acontact pad; and a second die electrically connected to a look-aheadcontact situated in proximity to the first die.
 148. The substrate ofclaim 147, wherein the look-ahead contact is situated on the substrate.149. The substrate of claim 147, wherein the look-ahead contact issituated on a periphery of the substrate.
 150. The substrate of claim147, wherein the look-ahead contact is situated on the substrate andadjacent to the first die.
 151. The substrate of claim 147, wherein thelook-ahead contact is situated on the first die.
 152. A substrate,comprising: a first die comprising a contact pad; and a second dieelectrically connected to a look-ahead contact situated in proximity tothe first die such that, upon probing, an electrical probesimultaneously contacts both the contact pad and the look-ahead contact.153. A substrate, comprising: a first die comprising a contact pad; anda second die electrically connected to a look-ahead contact situated inproximity to the first die such that, upon probing, an electrical probesimultaneously contacts both the contact pad and the look-ahead contact,and signals are about simultaneously routed to both the first die andthe second die.
 154. A substrate, comprising: a first die comprising acontact pad; and a second die electrically connected to a look-aheadcontact situated on the substrate proximal to the first die.
 155. Asubstrate, comprising: a first die comprising a contact pad; and asecond die electrically connected to a look-ahead contact situated onthe first die.
 156. A substrate, comprising: a first die comprising acontact pad and a look-ahead contact; and a second die electricallyconnected to the look-ahead contact.
 157. A substrate, comprising: afirst die comprising a contact pad and a look-ahead contact; and asecond die electrically connected to the look-ahead contact such that,upon probing, an electrical probe contacts both the contact pad and thelook-ahead contact, and signals are routed to the first die through thecontact pad and to the second die through the look-ahead contact.
 158. Asubstrate, comprising: a first die comprising a contact pad; and asecond die electrically connected to a look-ahead contact situated onthe substrate proximal to the first die; wherein each of the diescomprises at least one of a built-in self-stress (BISS) circuit and abuilt-in self-test (BIST) circuit.
 159. A substrate, comprising: a firstdie comprising a contact pad; and a second die electrically connected toa look-ahead contact situated on the first die; wherein each of the diescomprises at least one of a built-in self-stress (BISS) circuit and abuilt-in self-test (BIST) circuit.
 160. A substrate, comprising: a firstdie comprising a contact pad; two or more look-ahead contacts situatedin proximity to the first die; and a second die electrically connectedto the look-ahead contacts.
 161. The substrate of claim 160, wherein atleast one of the look-ahead contacts is situated on the substrateproximal to the first die.
 162. The substrate of claim 160, wherein atleast one of the look-ahead contacts is situated on the first die. 163.The substrate of claim 160, wherein the look-ahead contacts comprise aVcc contact and a GND contact.
 164. The substrate of claim 163, whereinthe look-ahead contacts further comprise a signal contact.
 165. Asubstrate, comprising: a first die comprising a contact pad, and atleast one of a built-in self-stress (BISS) circuit and a built-inself-test (BIST) circuit; two or more look-ahead contacts situated inproximity to the first die; and a second die electrically connected tothe look-ahead contacts.
 166. A substrate, comprising: a first diecomprising a contact pad; two or more look-ahead contacts situated inproximity to the first die; and a second die electrically connected tothe look-ahead contacts; wherein each of the dies comprises at least oneof a built-in self-stress (BISS) circuit and a built-in self-test (BIST)circuit.
 167. A substrate, comprising: first and second dies, and aredistribution layer comprising a look-ahead contact situated inproximity to the first die and a trace connecting the look-ahead contactto the second die.
 168. A substrate, comprising: first and second dies,and a redistribution layer comprising a look-ahead contact situated inproximity to the first die and a trace connecting the look-ahead contactto the second die, such that, upon probing, an electrical probe contactsboth a contact pad on the first die and the look-ahead contact, and atleast one of power, ground, and a signal are routed from the probe toboth the first die and the second die.
 169. A substrate, comprising:first and second dies, and a redistribution layer comprising alook-ahead contact situated in proximity to the first die and a traceconnecting the look-ahead contact to the second die, such that, uponprobing, an electrical probe contacts both a contact pad on the firstdie and the look-ahead contact, and at least one of power, ground, and asignal are routed from the probe through the contact pad to the firstdie and through the look-ahead contact and the trace to the second die.170. A semiconductor wafer, comprising: first and second dies situatedon the wafer, the first die comprising a contact pad, and the second dieelectrically connected to a look-ahead contact situated in proximity tothe first die.
 171. The wafer of claim 170, wherein the look-aheadcontact is situated on the wafer.
 172. The wafer of claim 170, whereinthe look-ahead contact is situated on the first die.
 173. Asemiconductor wafer, comprising: first and second dies situated on thewafer, the first die comprising a contact pad, and the second dieelectrically connected to two or more look-ahead contacts situated inproximity to the first die.
 174. A semiconductor wafer, comprising:first and second dies situated on the wafer, the first die comprising acontact pad, and the second die electrically connected to a Vcclook-ahead contact and a AND look-ahead contact, the look-ahead contactssituated in proximity to the first die.
 175. A semiconductor wafer,comprising: first and second dies situated on the wafer, the first diecomprising a contact pad, and the second die electrically connected to aVcc look-ahead contact, a GND look-ahead contact, and a look-aheadsignal contact, the look-ahead contacts situated in proximity to thefirst die.
 176. A semiconductor wafer, comprising: a first diecomprising a contact pad, a second die, and a redistribution layercomprising a plurality of look-ahead contacts and a trace connectingeach of the look-ahead contacts to the second die, the look-aheadcontacts situated in proximity to the first die such that, uponcontacting the contact pad of the first die by an element of a probedevice, other of the elements of the probe device contact the look-aheadcontacts and at least one of power, ground, and a signal is routed fromthe probe device through the trace to the second die.
 177. A testsystem, comprising: a test circuit, and a probe device structured with afirst probe element for contact with a contact pad on a die situated ona substrate and a second probe element for contact with a look-aheadcontact proximal to the first die.
 178. A test system, comprising: atest circuit, and a probe device structured with a first probe elementfor contact with a contact pad on a die situated on a substrate and asecond probe element for contact with a look-ahead contact situated onthe first die.
 179. A test system, comprising: a test circuit, and aprobe device structured with a first probe element for contact with acontact pad on a die situated on a substrate and a second probe elementfor contact with a look-ahead contact situated on the substrate proximalto the first die.
 180. A test system, comprising: a test circuit, and aprobe device structured with a first probe element for contact with acontact pad on a die situated on a substrate and a plurality of secondprobe elements for contact with each of a plurality of look-aheadcontacts situated proximal to the first die.
 181. A test system,comprising: a test circuit, and a probe device structured with a firstprobe element for contact with a contact pad on a die situated on asubstrate and a plurality of second probe elements for contact with eachof a plurality of look-ahead contacts situated proximal to the firstdie, the second probe elements comprising a first element for conductinga power supply voltage, and a second element for conducting a groundpotential.
 182. A test system, comprising: a test circuit, and a probedevice structured with a first probe element for contact with a contactpad on a die situated on a substrate and a plurality of second probeelements for contact with each of a plurality of look-ahead contactssituated proximal to the first die, the second probe elements comprisinga first element for conducting a power supply voltage, a second elementfor conducting a ground potential, and a third element for conducting asignal.
 183. A test system, comprising: a test circuit operable forgenerating test signals; a wafer handler; and a probe card structuredwith a first probe element for contact with a contact pad on a diesituated on a wafer and a second probe element for contact with alook-ahead contact proximal to the first die.
 184. A test system,comprising: a test circuit operable for generating test signals; a waferhandler; and a probe card structured with a first probe element situatedto make contact with a contact pad of a first die on a wafer and route asignal to circuitry of the first die, and a second probe elementsituated to make contact with a look-ahead contact proximal to the firstdie and route a signal to the look-ahead contact.
 185. A test system,comprising: a test circuit operable for generating test signals; a waferhandler; and a probe card structured with a first probe element situatedto make contact with a contact pad of a first die on a wafer and route asignal to circuitry of the first die, and a second probe elementsituated to make contact with a look-ahead contact proximal to the firstdie and route a signal to the look-ahead contact, such that an aboutconcurrent operation can be performed on the first die and a second dieinterconnected to the look-ahead contact and not directly probed by theprobe card.
 186. A test system, comprising: a test circuit operable forgenerating test signals; a wafer handler; and a probe card structuredwith a first probe element situated to make contact with a contact padof a first die on a wafer and route a signal to circuitry of the firstdie, and a second probe element situated to make contact with alook-ahead contact proximal to the first die and route a signal to thelook-ahead contact, such that an about concurrent operation can beperformed to test or stress the first die and a second dieinterconnected to the look-ahead contact and not directly probed by theprobe card.
 187. A test system, comprising: a test circuit operable forgenerating test signals; a wafer handler; a probe card structured with afirst probe element for contact with a contact pad on a die situated ona wafer and a second probe element for contact with a look-ahead contactproximal to the first die; and a probe interface board electricallyinterconnecting the test circuit and the probe card.
 188. A test system,comprising: a test circuit operable for generating test signals; a waferhandler; and a probe card structured with a first probe element forcontact with a contact pad on a die situated on a wafer and a secondprobe element for contact with a look-ahead contact proximal to thefirst die.
 189. A method for examining dies on a semiconductorsubstrate, comprising the steps of: contacting a contact pad on a firstdie and a look-ahead contact in proximity to the first die with probeelements, the look-ahead contact connected by a trace to a second die;and conveying an electrical transmission through the probe elements tothe contact pad of the first die and to the look-ahead contact to aboutsimultaneously test the first die and stress the second die.
 190. Amethod for examining circuitry of dies on a semiconductor substrate,comprising the steps of: contacting a contact pad on a first die and atleast two look-ahead contacts situated in proximity to the first diewith individual probe elements, each of the look-ahead contactsconnected by a trace to a second die; and providing an electricaltransmission through the probe elements to the contact pad of the fistdie and to the look-ahead contacts to about concurrently test the firstdie and stress the second die.
 191. A method for testing semiconductordies, comprising the steps of: contacting a contact pad on a first die,and a Vcc look-ahead contact and a GND look-ahead contact situated inproximity to the first die with separate probe elements, each of thelook-ahead contacts connected by a trace to a second die; and providinga signal through the probe element to the contact pad of the first dieto initiate a test operation of circuitry of the first die, and Vccpower through the probe element to the Vcc look-ahead contact and GNDground potential to the GND look-ahead contact to initiate a stressoperation of circuitry of the second die.
 192. A method for testingsemiconductor dies, comprising the steps of: probing a contact pad on afirst die with a first probe element, a Vcc look-ahead contact with asecond probe element, and a GND look-ahead contact with a third probeelement, the look-ahead contacts situated in proximity to the first dieand connected by a trace to the second die; and providing a signalthrough the first probe element to the contact pad of the first die toinitiate a test operation of circuitry of the first die, and Vcc powerthrough the second probe element to the Vcc look-ahead contact and GNDground potential through the third probe element to the GND look-aheadcontact to initiate a stress operation of circuitry of the second diesuch that the test operation on the first die and the stress operationon the second die are conducted about simultaneously.
 193. A method fortesting semiconductor dies, comprising the step of: positioning a probecard comprising a plurality of probe elements over the first die suchthat a first probe element contacts a contact pad on the first die and asecond probe element contacts a look-ahead contact in proximity to thefirst die and connected by a trace to a second die.
 194. A method fortesting semiconductor dies, comprising the steps of: positioning a probecard comprising a plurality of probe elements over the first die suchthat a first probe element contacts a contact pad on the first die and asecond probe element contacts a look-ahead contact in proximity to thefirst die and connected by a trace to a second die; and providing anelectrical transmission through the probe elements to the contact pad ofthe first die and the look-ahead contact to about simultaneouslyinitiate testing of the first die and stressing of the second die. 195.A method for testing semiconductor dies, comprising the steps of:positioning a probe card comprising a plurality of probe elements overthe first die such that probe elements make contact with contact pads onthe first die and look-ahead contacts in proximity to the fist die andconnected by a trace to a second die; and routing at least one of power,ground, and a signal through the probe elements in contact with thecontact pads of the first die to activate a built in self-test (BIST)circuit associated with the first die to initiate a test operation onthe first die, and through the probe elements in contact with thelook-ahead contacts and the second die to activate a built-inself-stress (BISS) circuit associated with the second die and initiate astress operation on the second die, such that the test operation and thestress operation are performed about concurrently.
 196. A method fortesting semiconductor dies, comprising the steps of: positioning a probecard comprising a plurality of probe elements over the first die suchthat probe elements make contact with contact pads on the first die andlook-ahead contacts in proximity to the first die and connected by atrace to a second die; routing power and ground, and optionally asignal, through the probe elements in contact with the contact pads ofthe first die to activate a built-in self-stress (BISS) circuitassociated with the first die to initiate a stress operation on thefirst die; and routing at least one of power, ground, and a signalthrough the probe elements in contact with the contact pads of the firstdie to activate a built in self-test (BIST) circuit associated with thefirst die and initiate a test operation on the first die, and throughthe probe elements in contact with the look-ahead contacts and thesecond die to activate a built-in self-stress (BISS) circuit associatedwith the second die and initiate a stress operation on the second die,such that the test operation and the stress operation are performedabout concurrently.
 197. A method for testing semiconductor dies,comprising the steps of: positioning a probe card comprising a pluralityof probe elements over the first die such that probe elements makecontact with contact pads on the first die and look-ahead contacts inproximity to the first die and connected by a trace to a second die;routing at least one of power, ground, and a signal through the probeelements in contact with the contact pads of the first die to activate abuilt-in self-stress (BISS) circuit associated with the first die toinitiate a stress operation on the first die; routing at least one ofpower, ground, and a signal through the probe elements in contact withthe contact pads of the first die to activate a built in self-test(BIST) circuit associated with the first die and initiate a testoperation on the first die, and through the probe elements in contactwith the look-ahead contacts connected to the second die to activate abuilt-in self-stress (BISS) circuit associated with the second die andinitiate a stress operation on the second die such that said test andstress operations are performed about concurrently; repositioning theprobe card over the second die such that probe elements make contactwith contact pads on the second die and look-ahead contacts in proximityto the second die and connected by a trace to a third die; and routingat least one of power, ground, and a signal through the probe elementsin contact with the contact pads of the second die to activate a builtin self-test (BIST) circuit associated with the second die and initiatea test operation on the second die, and through the probe elements incontact with the look-ahead contacts connected to the third die toactivate a built-in self-stress (BISS) circuit associated with the thirddie and initiate a stress operation on the third die such that test andstress operations are performed about concurrently.
 198. A method fortesting semiconductor dies, comprising the steps of: positioning a probecard comprising a plurality of probe elements over the first die suchthat the probe elements make contact with contact pads on the first dieand look-ahead contacts in proximity to the first die and connected by atrace to a second die; and routing at least one of power, ground, and asignal through the probe elements in contact with the contact pads ofthe first die to operate and test the first die, and through the probeelements in contact with the look-ahead contacts and the second die tostress the second die such that said testing and stressing of the diesare performed about concurrently.
 199. A method for testingsemiconductor dies, comprising the steps of: positioning a probe cardcomprising a plurality of probe elements over the first dic such thatthe probe elements make contact with contact pads on the first die andlook-ahead contacts in proximity to the first die and connected by atrace to a second die; routing at least one of power, ground, and asignal through the probe elements in contact with the contact pads ofthe first die to stress the first die; and routing at least one ofpower, ground, and a signal through the probe elements in contact withthe contact pads of the first die to operate and test the first die, andthrough the probe elements in contact with the look-ahead contacts andthe second die to stress the second die such that said testing andstressing of the dies are performed about concurrently.
 200. A methodfor testing semiconductor dies, comprising the steps of: positioning aprobe card comprising a plurality of probe elements over the first diesuch that the probe elements make contact with contact pads on the firstdie and look-ahead contacts in proximity to the first die and connectedby a trace to a second die; routing at least one of power, ground, and asignal through the probe elements in contact with the contact pads ofthe first die to stress the first die; routing at least one of power,ground, and a signal through the probe elements in contact with thecontact pads of the first die to operate and test the first die, andthrough the probe elements in contact with the look-ahead contacts andthe second die to stress the second die, such that said testing andstressing of the first and second dies are performed about concurrently;repositioning the probe card over the second die such that the probeelements make contact with contact pads on the second die and look-aheadcontacts in proximity to the second die and connected by a trace to athird die; and routing at least one of power, ground, and a signalthrough the probe elements in contact with the contact pads of thesecond die to operate and test the second die, mid through the probeelements in contact with the look-ahead contacts and the third die tostress the third die, such that said testing and stressing of the secondand third dies are performed about concurrently.
 201. A method fortesting semiconductor dies situated on a substrate, comprising the stepsof: positioning a probe over a first die, and probing a pad connected tothe first die and a look-ahead pad connected to a second die; conductinga stress operation on the first die; and conducting a test operation onthe first die and a stress operation on the second die.
 202. A methodfor testing semiconductor dies situated on a substrate, comprising thesteps of: stepping a probe through positions on the substrate to testthe dies on the substrate for opens/shorts; positioning the probe over afirst die and probing a pad connected to the first die and a look-aheadpad connected to a second die; conducting a stress operation on thefirst die; and conducting a test operation on the first die and a stressoperation on the second die.
 203. A method for testing semiconductordies situated on a substrate, comprising the steps of: positioning aprobe over a first die and probing a pad connected to the first die anda look-ahead pad connected to a second die; conducting a stressoperation on the first die; conducting an about concurrent testoperation on the first die and a stress operation on the second die;positioning the probe over the second die and probing a pad connected tothe second die and a look-ahead pad connected to a third die; andconducting a test operation on the second die and a stress operation onthe third die.
 204. A method for testing semiconductor dies situated ona substrate, comprising the steps of positioning a probe over a firstdie and probing a pad connected to the first die and a look-ahead padconnected to a second die; conducting a stress operation on the firstdie; conducting an about concurrent test operation on the first die anda stress operation on the second die; positioning the probe over thesecond die and probing a pad connected to the second die and alook-ahead pad electrically connected to a third die; conducting anabout concurrent a test operation on the second die and a stressoperation on the third die; and stepping the probe through remainingdies on the substrate wherein a pad of one or more of the remaining diesand a look-ahead pad connected to other of the remaining dies areprobed, and a stress operation and test operation is conducted on saidremaining dies.